MBE growth mode and C incorporation of GeC epilayers on Si(001) substrates using an arc plasma gun as a novel C source

被引：28

作者：

Okinaka, M ^{[1
]}

Hamana, Y ^{[1
]}

Tokuda, T ^{[1
]}

Ohta, J ^{[1
]}

Nunoshita, M ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 249卷 / 1-2期

关键词：

crystal structure; single crystal growth; molecular beam epitaxy; germanium carbon epilayer;

D O I：

10.1016/S0022-0248(02)02107-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Molecular beam epitaxy (MBE) growth of GeC epilayers on Si(001) substrates was attempted using an arc plasma gun as a novel C source for the first time. In preliminary experiments, the C beam generated by the gun was confirmed to consist mainly of 12 C and to include very few microparticles. In order to improve crystalline quality and obtain a higher substitutional C content x in Ge1-xCx epilayers, the variation in the growth mode and C incorporation with the supplied C fraction x(C) and growth temperature T-S was investigated systematically by reflection high-energy electron diffraction, X-ray diffraction (XRD) and Raman spectroscopy analyses. At x(C) = 7.3 % and T-S = 400degreesC, the maximum x value of 2.6% in a single-crystalline structure was obtained from XRD studies. It was clarified that use of the arc plasma gun and enhancement of non-equilibrium growth play important roles in the incorporation of substitutional C and in restraining C-cluster formation in the MBE growth of GeC/Si. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：78 / 86

页数：9

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