Long-wavelength (1.3-1.5 micron) quantum dot lasers based on GaAs

被引：15

作者：

Kovsh, AR ^{[1
]}

Ledentsov, NN ^{[1
]}

Mikhrin, SS ^{[1
]}

Zhukov, AE ^{[1
]}

Livshits, DA ^{[1
]}

Maleev, NA ^{[1
]}

Maximov, MV ^{[1
]}

Ustinov, VM ^{[1
]}

Gubenko, AE ^{[1
]}

Gadjiev, IM ^{[1
]}

Portnoi, EL ^{[1
]}

Wang, JS ^{[1
]}

Chi, J ^{[1
]}

Ouyang, D ^{[1
]}

Bimberg, D ^{[1
]}

Lott, JA ^{[1
]}

机构：

[1] NSC Nanosemicond GmbH, D-44227 Dortmund, Germany

来源：

PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XII | 2004年 / 5349卷

关键词：

quantum dots; diode lasers; beam quality; vertically surface emitting lasers; short pulses;

D O I：

10.1117/12.531245

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The molecular beam epitaxy of self-assembled quantum dots (QDs) has reached a level such that the principal advantages of QD lasers can now be fully realized. We overview the most important recent results achieved to date including excellent device performance of 1.3mum broad area and ridge waveguide lasers (J(th)<150A/cm(2), I-th=1.4mA, differential efficiency above 70%, CW 300mW single lateral mode operation), suppression of non-linearity of QD lasers, which results to improved beam quality, reduced wavelength chirp and sensitivity to optical feedback. Effect of suppression of side wall recombination in QD lasers is also described. These effects give a possibility to further improve and simplify processing and fabrication of laser modules targeting their cost reduction. Recent realization of 2mW single mode CW operation of QD VCSEL with all-semiconductor DBR is also presented. Long-wavelength QD lasers are promising candidate for mode-locking lasers for optical computer application. Very recently 1.7-ps-wide pulses at repetition rate of 20GHz were obtained on mode-locked QD lasers with clear indication of possible shortening of pulse width upon processing optimization. First step of unification of laser technology for telecom range with QD-lasers grown on GaAs has been done. Lasing at 1.5mum is achieved with threshold current density of 0.8kA/cm(2) and pulsed output power 7W.

引用

页码：31 / 45

页数：15

共 47 条

[1] The history and future of semiconductor heterostructures from the point of view of a Russian scientist [J].