Growth of LiNbO3 thin films on sapphire by pulsed-laser deposition for electro-optic modulators

被引：17
作者：
Kilburger, S. [1 ]
Chety, R.
Millon, E.
Di Bin, Ph.
Di Bin, C.
Boulle, A.
Guinebretiere, R.
机构：
[1] Univ Paul Verlaine Metz, LSMCL, Metz, France
[2] Univ Limoges, XLIM, Limoges, France
[3] Univ Limoges, SPCTS, Limoges, France
来源：
APPLIED SURFACE SCIENCE | 2007年 / 253卷 / 19期
关键词：
LiNbO3; thin films; epitaxy; pulsed-laser deposition; optical waveguides; modulator;
D O I：
10.1016/j.apsusc.2007.02.112
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Thin films of lithium niobate (LiNbO3: LN) have been successfully deposited onto c-axis sapphire substrates using the pulsed-laser deposition technique in order to grow epitaxially the expected phase. Films have been characterized by different techniques. X-ray diffraction measurements of these films deposited at temperature ranging from 600 to 750 degrees C and at oxygen pressures ranging from 10 to 30 Pa show the intense (0 0 0 6) peak of LN. In addition, epitaxial relationships between the LN thin films and the sapphire substrate are evidenced. The Rutherford backscattering spectroscopy measurements indicate that the films are nearly stoichiometric. The LN films are very smooth and practically free of droplets as highlighted by AFM experiments. The optical properties evaluated by m-line spectroscopy show a rather good light confinement but the grain size of crystallites in the films has to be improved to limit the optical losses. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：8263 / 8267
页数：5
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