Fabrication and characteristics of Schottky diode based on composite organic semiconductors

被引：48
作者：
Gupta, RK [1 ]
Singh, RA [1 ]
机构：
[1] Banaras Hindu Univ, Fac Sci, Dept Chem, Mol Elect Lab, Varanasi 221005, Uttar Pradesh, India
来源：
COMPOSITES SCIENCE AND TECHNOLOGY | 2005年 / 65卷 / 3-4期
关键词：
polymers; electrical properties; non-linear behavior;
D O I：
10.1016/j.compscitech.2004.09.006
中图分类号：
TB33 [复合材料];
学科分类号：
摘要：
Schottky barrier diode based on composite of polyaniline with polystyrene has been fabricated and characterized using indium as Schottky contact and platinum as an ohmic contact. Current-voltage (I-V) plots were non-linear and capacitance-voltage (C-V) plots were almost linear in reverse bias indicating rectification behavior. Various junction parameters were calculated from the temperature dependent I-V and C-V data and discussed. These results indicate that the composite materials have better mechanical strength and diode quality compare to that of pure polymer. (C) 2004 Elsevier Ltd. Ail rights reserved.
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收藏
页码：677 / 681
页数：5
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