Effects of annealing on charge in HfO2 gate stacks

被引：23

作者：

Zhang, Z ^{[1
]}

Li, M ^{[1
]}

Campbell, SA ^{[1
]}

机构：

[1] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 01期

关键词：

annealing; charge; gate dielectric; HfO2; high-kappa; metal gate electrode; work function;

D O I：

10.1109/LED.2004.840016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a systematic investigation of charge in HfO2 gate stacks. Assuming that the majority of charge is associated with the stack interfaces, it is found that the charge at the HfO2/interfacial layer (IL) interface is negative while the charge at the SOL interface is positive. In general, the calculated charge densities at both interfaces are of order 10(12) cm(-2). A forming gas anneal (FGA) reduces the interface charge greatly at both interfaces. However, the FGA temperature does not have much effect on the charge density. The effects of post deposition anneal at various temperatures and under various atmospheres are also studied. Its found that a high temperature dilute oxidizing atmosphere anneal reduces the charge at both interfaces.

引用

页码：20 / 22

页数：3

共 16 条

[1] MOSFET transistors fabricated with high permitivity TiO2 dielectrics [J].

Campbell, SA ;

Gilmer, DC ;

Wang, XC ;

Hsieh, MT ;

Kim, HS ;

Gladfelter, WL ;

Yan, JH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (01) :104-109

[2] Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-κ insulator:: The role of remote phonon scattering [J].

Fischetti, MV ;

Neumayer, DA ;

Cartier, EA .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (09) :4587-4608

[3]

Hauser JR, 1998, AIP CONF PROC, V449, P235

[4] Fermi-level pinning at the polysilicon/metal oxide interface - Part I [J].

Hobbs, CC ;

Fonseca, LRC ;

Knizhnik, A ;

Dhandapani, V ;

Samavedam, SB ;

Taylor, WJ ;

Grant, JM ;

Dip, LG ;

Triyoso, DH ;

Hegde, RI ;

Gilmer, DC ;

Garcia, R ;

Roan, D ;

Lovejoy, ML ;

Rai, RS ;

Hebert, EA ;

Tseng, HH ;

Anderson, SGH ;

White, BE ;

Tobin, PJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (06) :971-977

[5]

Hobbs CC, 2004, IEEE T ELECTRON DEV, V51, P978, DOI 10.1109/TED.2004.829510

[6] A capacitance-based methodology for work function extraction of metals on high-κ [J].

Jha, R ;

Gurganos, J ;

Kim, YH ;

Choi, R ;

Lee, J ;

Misra, V .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (06) :420-423

[7] Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics [J].

Kerber, A ;

Cartier, E ;

Pantisano, L ;

Degraeve, R ;

Kauerauf, T ;

Kim, Y ;

Hou, A ;

Groeseneken, G ;

Maes, HE ;

Schwalke, U .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (02) :87-89

[8] Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates [J].

Ma, TZ ;

Campbell, SA ;

Smith, R ;

Hoilien, N ;

He, BY ;

Gladfelter, WL ;

Hobbs, C ;

Buchanan, D ;

Taylor, C ;

Gribelyuk, M ;

Tiner, M ;

Coppel, M ;

Lee, JJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (10) :2348-2356

[9]

NICOLLIAN EH, 1982, P MOS PHYS TECHNOLOG, P786

[10] Hall mobility in hafnium oxide based MOSFETs:: Charge effects [J].

Ragnarsson, LÅ ;

Bojarczuk, NA ;

Karasinski, J ;

Guha, S .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (11) :689-691

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