Band structure investigation of strained Si1-xGex/Si coupled quantum wells

被引：0

作者：

Lu, F. ^{[1
]}

Fan, W. J. ^{[1
]}

Dang, Y. X. ^{[1
]}

Zhang, D. H. ^{[1
]}

Yoon, S. F. ^{[1
]}

Wang, R. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

INTERNATIONAL JOURNAL OF NANOTECHNOLOGY | 2007年 / 4卷 / 04期

关键词：

band structure; coupled quantum well; 8-band k center dot p method; strain effect; valence band; hole subband energy; coupling effect;

D O I：

10.1504/IJNT.2007.013977

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The band structure of Si1-xGex/Si coupled quantum wells (CQW) was calculated with the 8-band k - p method. Both strain and spin-orbit split-off band effect were taken into account. The subband energy of the Si0.6Ge0.4/Si quantum well as a function of barrier width and well width was calculated. Barrier width varies between 20-60 angstrom while well width varies between 30-110 angstrom. Finally, the relationship between subband energy and Ge composition range from 10% to 60% was also shown.

引用

页码：431 / 440

页数：10

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