Band structure investigation of strained Si1-xGex/Si coupled quantum wells

被引：0
|
作者：
Lu, F. [1 ]
Fan, W. J. [1 ]
Dang, Y. X. [1 ]
Zhang, D. H. [1 ]
Yoon, S. F. [1 ]
Wang, R. [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
来源：
INTERNATIONAL JOURNAL OF NANOTECHNOLOGY | 2007年 / 4卷 / 04期
关键词：
band structure; coupled quantum well; 8-band k center dot p method; strain effect; valence band; hole subband energy; coupling effect;
D O I：
10.1504/IJNT.2007.013977
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The band structure of Si1-xGex/Si coupled quantum wells (CQW) was calculated with the 8-band k - p method. Both strain and spin-orbit split-off band effect were taken into account. The subband energy of the Si0.6Ge0.4/Si quantum well as a function of barrier width and well width was calculated. Barrier width varies between 20-60 angstrom while well width varies between 30-110 angstrom. Finally, the relationship between subband energy and Ge composition range from 10% to 60% was also shown.
引用
收藏
页码：431 / 440
页数：10
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