Theoretical investigations of Janus WSeTe monolayer and related van der Waals heterostructures with promising thermoelectric performance

被引:24
|
作者
Wang, Cong [1 ]
Chen, Yue-Xing [2 ]
Gao, Guoying [3 ]
Xu, Ke [1 ]
Shao, Hezhu [4 ]
机构
[1] Hubei Univ Arts & Sci, Hubei Key Lab Low Dimens Optoelect Mat & Devices, Xiangyang 441053, Peoples R China
[2] Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Adv Thin Films & Applicat, Key Lab Optoelect Devices, Shenzhen 518060, Peoples R China
[3] Huazhong Univ Sci & Technol, Sch Phys, Wuhan 430074, Peoples R China
[4] Wenzhou Univ, Coll Elect & Elect Engn, Wenzhou 325035, Peoples R China
关键词
Thermoelectric; First-principles calculations; Janus monolayer WSeTe; MoSSe; WSeTe heterostructure; Band convergence; TRANSITION-METAL DICHALCOGENIDES; THERMAL TRANSPORT-PROPERTIES;
D O I
10.1016/j.apsusc.2022.153402
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Recently, two-dimensional (2D) Janus MXY monolayers have received much attention due to their novel properties induced by the antisymmetric structures. In this work, the thermoelectric transport properties of the WSe2 and the Janus WSeTe monolayers are comparatively investigated based on first-principles calculations. The carriers of holes with higher mobility result in the better p-type power factor of WSeTe than WSe2. In addition, the broken of the mirror-asymmetry enhances the coupling strength between acoustic and optical branches and thus reduces the lattice thermal conductivity in WSeTe. The obtained ZT value of 1.53 is 5.9 times larger than that of WSe2 (0.26). Meanwhile, the thermoelectric performance of heterostructure MoSSe/WSeTe can be greatly enhanced by the biaxial compressive strain resulting from the band convergence. At the strain of -3%, the optimal ZT value of 1.62 is achieved for the p-type doped MoSSe/WSeTe at 300 K, which is 2.05 times higher than that of the unstrained structure. These results reveal that Janus monolayer WSeTe and its van der Waals heterostructure MoSSe/WSeTe are promising thermoelectric materials.
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页数:9
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