Angle-Resolved Intensity of Polarized Micro-Raman Spectroscopy for 4H-SiC

被引：18

作者：

Chang, Ying ^{[1
]}

Xiao, Aixia ^{[1
]}

Li, Rubing ^{[1
]}

Wang, Miaojing ^{[1
]}

He, Saisai ^{[1
]}

Sun, Mingyuan ^{[1
]}

Wang, Lizhong ^{[2
]}

Qu, Chuanyong ^{[1
]}

Qiu, Wei ^{[1
]}

机构：

[1] Tianjin Univ, Sch Mech Engn, Tianjin Key Lab Modern Engn Mech, Tianjin 300072, Peoples R China

[2] Semicore Crystal Co Ltd, Mkt Sect, Taiyuan 030028, Peoples R China

来源：

CRYSTALS | 2021年 / 11卷 / 06期

基金：

中国国家自然科学基金;

关键词：

Raman intensity; angle-resolved Raman; polarization Raman; uniaxial crystal 4H-SiC; GRAPHENE;

D O I：

10.3390/cryst11060626

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Raman spectroscopy is an indispensable method for the nondestructive testing of semiconductor materials and their microstructures. This paper presents a study on the angle-resolved intensity of polarized micro-Raman spectroscopy for a 4H silicon carbide (4H-SiC) wafer. A generalized theoretical model of polarized Raman intensity was established by considering the birefringence effect. The distributions of angle-resolved Raman intensities were achieved under normal and oblique backscattering configurations. Experiments were performed on a self-built angle-resolved Raman system, which verified the validity of the proposed model and achieved the identification of crystal orientations of the 4H-SiC sample.

引用

页数：13

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