Dual-layer structure of Ti on Al2O3(0001) grown epitaxially at room temperature

被引：0

作者：

Chen, WC ^{[1
]}

Lin, YR

Guo, XJ

Wu, ST

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30043, Taiwan

[2] Natl Tsing Hua Univ, Dept Chem, Hsinchu 30043, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 4A期

关键词：

epitaxy; titanium; sapphire; magnetron sputtering; pole figure;

D O I：

10.1143/JJAP.42.L381

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The epitaxial growth of titanium on Al2O3(0 0 0 1) was achieved using magnetron sputtering with no substrate heating. The heating power supply was turned off during sputtering. The titanium layer was composed of two layers: Ti(1 0 -1 0)/Ti(0 0 0 1)/Al2O3(0 0 0 1). Both X-ray and electron diffraction were applied to establish the epitaxial relationship: Ti(1 0 -1 0) parallel to Ti(0 0 0 1) parallel to Al2O3(0 0 0 1) Ti[0 0 0 1] parallel to Ti[1 0 -1 0] parallel to Al2O3[1 1 -2 0].

引用

页码：L381 / L383

页数：3

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