Optical and microstructural properties of InGaN/GaN multiple quantum wells with embedded graphene coating

被引：2
|
作者：
Bae, Goh-Myeong [1 ,2 ]
Choi, Jae-Kyung [1 ,2 ,6 ]
Cho, Chu-Young [3 ]
Lee, Jong-Hwa [1 ,2 ]
Kwak, Jinsung [1 ,2 ]
Na, Hyunseok [4 ]
Park, Kyung-Ho [3 ]
Park, Kibog [5 ]
Kwon, Soon-Yong [1 ,2 ]
机构：
[1] UNIST, Sch Mat Sci & Engn, Ulsan 44919, South Korea
[2] UNIST, Low Dimens Carbon Mat Ctr, Ulsan 44919, South Korea
[3] Korea Adv Nano Fab Ctr, Suwon 16229, South Korea
[4] Daejin Univ, Dept Adv Mat Sci & Engn, Gyeonggi 11159, South Korea
[5] UNIST, Dept Phys, Ulsan 44919, South Korea
[6] KISTI, SMEs Support Ctr, Busan 48058, South Korea
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2017年 / 713卷
基金：
新加坡国家研究基金会;
关键词：
Nitride materials; Crystal growth; Coating materials; Nanostructured materials; Graphene; LIGHT-EMITTING-DIODES; OUTPUT POWER ENHANCEMENT; GAN LAYERS; RELAXATION; SEPARATION; STRAIN; GROWTH; FILMS; DOTS;
D O I：
10.1016/j.jallcom.2017.04.120
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We investigate the effects of embedded graphene coating on the optical and microstructural properties of ultrathin InGaN/GaN multiple quantum wells (MQWs). The InGaN/GaN MQWs grown on graphene-buffered GaN templates displayed enhanced internal quantum efficiency compared to conventional ones and showed the internal electric field effect-free characteristic, desirable for general lighting applications. These phenomena were attributed to the enhancement of potential fluctuation with increased indium content and negligible piezoelectric polarization in ultrathin InGaN QWs, respectively. It was found that the atomically rough surface of GaN induced by embedded graphene coating efficiently relieved the biaxial compressive strain in the ultrathin InGaN/GaN QWs and enhanced the In incorporation efficiency during the InGaN growth, suggesting the potential use of atomic-thick carbon layer in niche optoelectronic applications. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：87 / 94
页数：8
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