Low-pressure metalorganic vapor phase epitaxy of InP on (111) substrates

We present a low-pressure metalorganic vapor phase epitaxy study of InP layers on (111)A and (111)B substrates, both normal and off-oriented 1 degrees towards the [01(1) over bar] and [(2) over bar 11] directions. The optimal temperature was 650 degrees C for growth of specular surfaces on normal (111)A substrates, a slight increase compared to that for (001) substrates. Higher photoluminescence intensity was obtained compared to (001)InP epilayers. Specular surfaces could not be obtained on normal (111)B substrates over the wide range of growth temperatures and V/III ratios explored. However, the (111)B surface morphology was considerably improved at 600 degrees C using misoriented substrates, particularly with the [(2) over bar 11] direction of tilt. There are reasons to expect that this morphology, which still shows a few elongated defects, may be further improved using the nonequivalent opposite [<2(11)over bar>] tilt direction. (C) 1998 American Vacuum Society. [S0734-2101(98)08602-3].