Design and performance of a low-noise, low-power consumption CMOS charge amplifier for capacitive detectors

被引:20
作者
Hu, Y [1 ]
Solere, JL
Lachartre, D
Turchetta, R
机构
[1] Univ Strasbourg 1, IN2P3, LEPSI, F-67037 Strasbourg, France
[2] CENS, SEI, DAPNIA, CEA, F-91191 Gif Sur Yvette, France
关键词
low-noise amplifiers; low-power design; low voltage;
D O I
10.1109/23.659562
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a new design of low noise, low-power consumption charge amplifier is described. Theoretical results show that a total output noise voltage reduction of 0.264 mV has been obtained. This value corresponds to a 46% reduction compared to the noise performance of a conventional charge amplifier. A complete readout system including the proposed charge amplifier has been realized in a 0.8-mu m semiconductor on insulator (SOI) bipolar complementary metal-oxide-semiconductor (BICMOS) process. A measured noise performance of 450 electrons at O pF with a slope of 44 electrons/pF for a shaping time of 45 ns, a conversion gain of 20 mV/fC and 1-mW power consumption have been obtained.
引用
收藏
页码:119 / 123
页数:5
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