Crystalline SiC thin film deposition by laser ablation: influence of laser surface activation

被引：18
作者：
Diegel, M
Falk, F
Hergt, R
Hobert, H
Stafast, H
机构：
[1] Inst Phys Hochtechnol EV, D-07743 Jena, Germany
[2] Univ Jena, D-07743 Jena, Germany
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1998年 / 66卷 / 02期
关键词：
D O I：
10.1007/s003390050653
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin films (200-500 nm) of crystalline SIC were deposited onto heated substrates (950-1200 degrees C) of fused silica, YSZ(100), Si(100), and Si(lll) by KrF laser ablation from a SiC target with optional laser surface activation. The SiC crystal structure (XRD, Raman) achieved on fused silica and YSZ was only poor. On Si substrates highly oriented SiC films were obtained which mainly consist of 6H- and 3C-polytypes in the low temperature region. At elevated temperature (1200 degrees C) the GH-part decreases in favour of the 3C-phase. KrF laser activation (23 mJ/cm(2)) of the growing SIC film improved the film microstructure equivalent to an increase of the substrate temperature by 150-200 degrees C.
引用
收藏
页码：183 / 187
页数：5
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