Alpha Soft Error Rate of FDSOI 28 nm SRAMs: Experimental Testing and Simulation Analysis

被引：0

作者：

Malherbe, Victor ^{[1
,2
,3
]}

Gasiot, Gilles ^{[1
]}

Soussan, Dimitri ^{[1
]}

Patris, Aurelien ^{[2
,3
]}

Autran, Jean-Luc ^{[2
,3
]}

Roche, Philippe ^{[1
]}

机构：

[1] STMicroelectronics, 850 Rue Jean Monnet, F-38926 Crolles, France

[2] Aix Marseille Univ, Marseille, France

[3] CNRS, IM2NP, UMR7334, Marseille, France

来源：

2015 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2015年

关键词：

DEVICE SIMULATION; CHARGE COLLECTION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on soft error rate measurements on 28 nm commercial FDSOI SRAM bitcells under alpha irradiation. The technology proves to be experimentally quasi-immune to alpha particles. Simulation results are also presented, through 3D-TCAD investigations of the transport mechanisms followed by Monte-Carlo simulations of the charge deposition.

引用

页数：6

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