Alpha Soft Error Rate of FDSOI 28 nm SRAMs: Experimental Testing and Simulation Analysis

被引：0
|
作者：
Malherbe, Victor [1 ,2 ,3 ]
Gasiot, Gilles [1 ]
Soussan, Dimitri [1 ]
Patris, Aurelien [2 ,3 ]
Autran, Jean-Luc [2 ,3 ]
Roche, Philippe [1 ]
机构：
[1] STMicroelectronics, 850 Rue Jean Monnet, F-38926 Crolles, France
[2] Aix Marseille Univ, Marseille, France
[3] CNRS, IM2NP, UMR7334, Marseille, France
来源：
2015 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2015年
关键词：
DEVICE SIMULATION; CHARGE COLLECTION;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on soft error rate measurements on 28 nm commercial FDSOI SRAM bitcells under alpha irradiation. The technology proves to be experimentally quasi-immune to alpha particles. Simulation results are also presented, through 3D-TCAD investigations of the transport mechanisms followed by Monte-Carlo simulations of the charge deposition.
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收藏
页数：6
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