Tailoring. graphene layer-to-layer growth

被引:14
作者
Li, Yongtao [1 ,2 ]
Wu, Bin [1 ]
Guo, Wei [1 ]
Wang, Lifeng [1 ]
Li, Jingbo [2 ]
Liu, Yunqi [1 ]
机构
[1] Chinese Acad Sci, Key Lab Organ Solids, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
[2] Guangdong Univ Technol, Fac Mat & Energy Engn, Guangzhou 510006, Guangdong, Peoples R China
基金
中国国家自然科学基金;
关键词
bi-layer and multi-layer graphene; chemical vapor deposition; growth mechanism; liquid copper; VAPOR-DEPOSITION GROWTH; CU-NI ALLOY; BILAYER GRAPHENE; GRAIN-BOUNDARIES; SINGLE-LAYER; HIGH-QUALITY; FILMS; ORIENTATION; HYDROGEN; DEFECTS;
D O I
10.1088/1361-6528/aa730b
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A layered material grown between a substrate and the upper layer involves complex interactions and a. confined reaction space, representing an unusual growth mode. Here, we show. multi-layer graphene domains. grown on liquid or solid Cu by the. chemical vapor deposition method via this 'double-substrate' mode. We demonstrate the interlayer-induced coupling effect on the twist angle in bi-and multi-layer graphene. We discover dramatic growth disunity for different graphene layers, which is explained by the ideas of a chemical 'gate' and a. material transport process within a confined space. These key results lead to a consistent framework for understanding the. dynamic evolution of multi-layered graphene flakes and tailoring the layer-to-layer growth for practical applications.
引用
收藏
页数:11
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