Effects of rapid thermal annealing on Cr/Si/Pt Schottky photodetector in the mid-infrared regime

In order to enable the silicon photoelectric detector to be easily integrated with CMOS components in the circuit, which is necessary for commercial demand, the thin film structure on the surface can enhance the electrical and optical characteristics of the devices. Here we have used metal nanoscale thin film structure to study the electrical and optical performance in silicon-based detector. We deposited a thin film of Cr on n-type Silicon (n-Si) with an electron-beam evaporator. The main purpose of this step is to generate the active layer on device, and this was followed by annealing using rapid thermal processer in temperature range from 500 degrees C to 700 degrees C. The performed experiments shows that the device use IPE effect to collect hot carriers and by rapid thermal annealing, allowing carriers to easily cross over and generate detection signals.