Extremely Large Magnetoresistance at Low Magnetic Field by Coupling the Nonlinear Transport Effect and the Anomalous Hall Effect

被引：24

作者：

Luo, Zhaochu ^{[1
,2
]}

Xiong, Chengyue ^{[1
,2
]}

Zhang, Xu ^{[3
]}

Guo, Zhen-Gang ^{[1
,2
]}

Cai, Jianwang ^{[3
]}

Zhang, Xiaozhong ^{[1
,2
]}

机构：

[1] Tsinghua Univ, Sch Mat Sci & Engn, Beijing 100084, Peoples R China

[2] Tsinghua Univ, Beijing Natl Ctr Electron Microscopy, Beijing 100084, Peoples R China

[3] Chinese Acad Sci, Inst Phys, Beijing 100084, Peoples R China

来源：

ADVANCED MATERIALS | 2016年 / 28卷 / 14期

基金：

美国国家科学基金会;

关键词：

ROOM-TEMPERATURE; TUNNELING MAGNETORESISTANCE; MAGNETOCURRENT; DEVICES;

D O I：

10.1002/adma.201504023

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The anomalous Hall effect of a magnetic material is coupled to the nonlinear transport effect of a semiconductor material in a simple structure to achieve a large geometric magnetoresistance (MR) based on a diode-assisted mechanism. An extremely large MR (>104%) at low magnetic fields (1 mT) is observed at room temperature. This MR device shows potential for use as a logic gate for the four basic Boolean logic operations. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA.

引用

页码：2760 / 2764

页数：5

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