Extremely Large Magnetoresistance at Low Magnetic Field by Coupling the Nonlinear Transport Effect and the Anomalous Hall Effect

被引：24
作者：
Luo, Zhaochu [1 ,2 ]
Xiong, Chengyue [1 ,2 ]
Zhang, Xu [3 ]
Guo, Zhen-Gang [1 ,2 ]
Cai, Jianwang [3 ]
Zhang, Xiaozhong [1 ,2 ]
机构：
[1] Tsinghua Univ, Sch Mat Sci & Engn, Beijing 100084, Peoples R China
[2] Tsinghua Univ, Beijing Natl Ctr Electron Microscopy, Beijing 100084, Peoples R China
[3] Chinese Acad Sci, Inst Phys, Beijing 100084, Peoples R China
来源：
ADVANCED MATERIALS | 2016年 / 28卷 / 14期
基金：
美国国家科学基金会;
关键词：
ROOM-TEMPERATURE; TUNNELING MAGNETORESISTANCE; MAGNETOCURRENT; DEVICES;
D O I：
10.1002/adma.201504023
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The anomalous Hall effect of a magnetic material is coupled to the nonlinear transport effect of a semiconductor material in a simple structure to achieve a large geometric magnetoresistance (MR) based on a diode-assisted mechanism. An extremely large MR (>104%) at low magnetic fields (1 mT) is observed at room temperature. This MR device shows potential for use as a logic gate for the four basic Boolean logic operations. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA.
引用
收藏
页码：2760 / 2764
页数：5
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