Photosensitivity of porous silicon-layered III-VI semiconductors heterostructures

被引：2
|
作者：
Lebedev, AA [1 ]
Rud', YV
Rud', VY
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194120, Russia
[2] St Petersburg State Tech Univ, St Petersburg 195251, Russia
来源：
SEMICONDUCTORS | 1998年 / 32卷 / 03期
关键词：
Silicon; Magnetic Material; Electromagnetism; Porous Silicon; Layered InSe;
D O I：
10.1134/1.1187558
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Rectifying heterojunctions with photosensitivity 1-5 V/W at T = 300 K were obtained by forming optical contacts between free porous silicon and layered InSe and GaSe semiconductors. A wide-band photovoltaic effect was obtained when these heterostructures were illuminated on the free porous silicon plate side. The long-wavelength photosensitivity edge of these devices is determined by direct transitions in InSe or GaSe, respectively. It is concluded that heterojunctions based on free porous silicon plates can be used as wide-band phototransducers. (C) 1998 American Institute of Physics.
引用
收藏
页码：320 / 321
页数：2
相关论文
共 50 条
  • [21] Coherent polariton propagation in the layered III-VI semiconductor InSe
    RWTH Aachen, Aachen, Germany
    Conf Quant Electron Laser Sci QELS Tech Dig Ser, (161-162):
  • [22] The interaction of II-VI, III-VI and IV-VI group semiconductors with metals
    Tomashik, VN
    Grytsiv, VI
    Tomashik, ZF
    Seritsan, OV
    MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS, 1997, 3182 : 400 - 403
  • [23] Layered III-VI Chalcogenide Semiconductor Crystals for Radiation Detectors
    Mandal, Krishna C.
    Mertiri, Alket
    Pabst, Gary W.
    Roy, Ronald G.
    Cui, Y.
    Battacharya, P.
    Groza, M.
    Burger, A.
    Conway, Adam M.
    Nikolic, Rebecca J.
    Nelson, Art J.
    Paynec, Stephen A.
    HARD X-RAY, GAMMA-RAY, AND NEUTRON DETECTOR PHYSICS X, 2008, 7079
  • [24] Recent developments in II-VI and III-VI semiconductors and their applications in solar cells
    Afzaal, M
    O'Brien, P
    JOURNAL OF MATERIALS CHEMISTRY, 2006, 16 (17) : 1597 - 1602
  • [25] Pressure dependence of the low-frequency dielectric constant in III-VI semiconductors
    Errandonea, D
    Segura, A
    Muñoz, V
    Chevy, A
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1999, 211 (01): : 201 - 206
  • [26] Describing the heat capacity of III-VI compound semiconductors in a fractal model
    Tyurin, A. V.
    Izotov, A. D.
    Gavrichev, K. S.
    Zlomanov, V. P.
    INORGANIC MATERIALS, 2014, 50 (09) : 903 - 906
  • [27] Calculation of the electron structure of vacancies and their compensated states in III-VI semiconductors
    Mehrabova, M. A.
    Madatov, R. S.
    SEMICONDUCTORS, 2011, 45 (08) : 998 - 1005
  • [28] Calculation of the electron structure of vacancies and their compensated states in III-VI semiconductors
    M. A. Mehrabova
    R. S. Madatov
    Semiconductors, 2011, 45 : 998 - 1005
  • [29] Epitaxial GaAs Lift Off via III-VI Layered Compounds
    Kojima, Nobuaki
    Wang, Yu-Cian
    Kawakatsu, Kei
    Yamamoto, Akio
    Ohshita, Yoshio
    Yamaguchi, Masafumi
    2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2019, : 1015 - 1017
  • [30] Diluted magnetic semiconductors based on II-VI, III-VI, and IV-VI compounds
    Lashkarev, G. V.
    Sichkovskiyi, V. I.
    Radchenko, M. V.
    Karpina, V. A.
    Butorin, P. E.
    Dmitriev, O. I.
    Lazorenko, V. I.
    Slyn'ko, E. I.
    Lytvyn, P. M.
    Jakiela, R.
    Knoff, W.
    Story, T.
    Aleshkevych, P.
    LOW TEMPERATURE PHYSICS, 2009, 35 (01) : 62 - 70
12345