Photosensitivity of porous silicon-layered III-VI semiconductors heterostructures

被引：2

作者：

Lebedev, AA ^{[1
]}

Rud', YV

Rud', VY

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194120, Russia

[2] St Petersburg State Tech Univ, St Petersburg 195251, Russia

来源：

SEMICONDUCTORS | 1998年 / 32卷 / 03期

关键词：

Silicon; Magnetic Material; Electromagnetism; Porous Silicon; Layered InSe;

D O I：

10.1134/1.1187558

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Rectifying heterojunctions with photosensitivity 1-5 V/W at T = 300 K were obtained by forming optical contacts between free porous silicon and layered InSe and GaSe semiconductors. A wide-band photovoltaic effect was obtained when these heterostructures were illuminated on the free porous silicon plate side. The long-wavelength photosensitivity edge of these devices is determined by direct transitions in InSe or GaSe, respectively. It is concluded that heterojunctions based on free porous silicon plates can be used as wide-band phototransducers. (C) 1998 American Institute of Physics.

引用

页码：320 / 321

页数：2

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