Spin dynamics of electrons and holes in InGaAs/GaAs quantum wells at millikelvin temperatures

被引：24

作者：

Fokina, L. V. ^{[1
]}

Yugova, I. A. ^{[2
]}

Yakovlev, D. R. ^{[1
,3
]}

Glazov, M. M. ^{[3
]}

Akimov, I. A. ^{[1
,3
]}

Greilich, A. ^{[1
]}

Reuter, D. ^{[4
]}

Wieck, A. D. ^{[4
]}

Bayer, M. ^{[1
]}

机构：

[1] Tech Univ Dortmund, D-44221 Dortmund, Germany

[2] St Petersburg State Univ, Fac Phys, Dept Solid State Phys, St Petersburg 198504, Russia

[3] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194201, Russia

[4] Ruhr Univ Bochum, D-44780 Bochum, Germany

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 19期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1103/PhysRevB.81.195304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The carrier spin dynamics in a n-doped (In,Ga)As/GaAs quantum well has been studied by time-resolved Faraday rotation and ellipticity techniques in the temperature range down to 430 milliKelvin. These techniques give data with very different spectral dependencies, from which nonetheless consistent information on the spin dynamics can be obtained, in agreement with theoretical predictions. The mechanisms of long-lived spin coherence generation are discussed for the cases of trion and exciton resonant excitation. We demonstrate that carrier localization leads to a saturation of spin relaxation times at 45 ns for electrons below 4.5 K and at 2 ns for holes below 2.3 K. The underlying spin relaxation mechanisms are discussed.

引用

页数：8

共 50 条

[1] OPTICAL ORIENTATION OF HOLES AND ELECTRONS IN STRAINED LAYER INGAAS/GAAS QUANTUM-WELLS
VASILEV, AM
DAIMINGER, F
STRAKA, J
FORCHEL, A
KOCHERESHKO, VP
SANDLER, GL
URALTSEV, IN
SUPERLATTICES AND MICROSTRUCTURES, 1993, 13 (01) : 97 - 100
[2] Quantum Droplets of Electrons and Holes in GaAs Quantum Wells
Cundiff, S. T.
Almand-Hunter, A. E.
Li, H.
Mootz, M.
Kira, M.
Koch, S. W.
ULTRAFAST PHENOMENA XIX, 2015, 162 : 264 - 266
[3] Electron spin-relaxation dynamics in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells
Tackeuchi, Atsushi
Kuroda, Takamasa
Muto, Shunichi
Nishikawa, Yuji
Wada, Osamu
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (08): : 4680 - 4687
[4] Electron spin-relaxation dynamics in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells
Tackeuchi, A
Kuroda, T
Muto, S
Nishikawa, Y
Wada, O
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (08): : 4680 - 4687
[5] Luminescence Polarization Dynamics and Spin Relaxation of Excitons in Strained InGaAs/GaAs Quantum Wells
Amand, T.
Razdobreev, I.
Dareys, B.
Marie, X.
Bulletin of the Russian Academy of Sciences. Physics, 1994, 58 (07)
[6] Spin coherence of holes in GaAs/AlGaAs quantum wells
Syperek, Marcin
Yakovlev, D. R.
Greilich, A.
Bayer, M.
Misiewicz, J.
Reuter, D.
Wieck, A.
PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 1303 - +
[7] Long spin relaxation time of holes in InGaAs/GaAs quantum wells probed by cyclotron resonance spectroscopy
Drachenko, O.
Kozlov, D.
Ikonnikov, A. V.
Spirin, K. E.
Gavrilenko, V.
Schneider, H.
Helm, M.
Wosnitza, J.
PHYSICAL REVIEW B, 2013, 87 (07):
[8] ELECTRICAL TRANSPORT OF HOLES IN GAAS/INGAAS/GAAS SINGLE STRAINED QUANTUM-WELLS
FRITZ, IJ
DRUMMOND, TJ
OSBOURN, GC
SCHIRBER, JE
JONES, ED
APPLIED PHYSICS LETTERS, 1986, 48 (24) : 1678 - 1680
[9] Spin dynamics of electrons and holes in p-doped InAs/GaAs quantum dots
Braun, P. -F.
Lombez, L.
Marie, X.
Urbaszek, B.
Amand, T.
Renucci, P.
Gauffier, J. -L.
Kalevich, V. K.
Kavokin, K. V.
Krebs, O.
Voisin, P.
BRAZILIAN JOURNAL OF PHYSICS, 2006, 36 (2A) : 482 - 487
[10] Exciton spin dynamics in GaAs quantum wells
Adachi, S
Miyashita, T
Takeyama, S
Takagi, Y
Tackeuchi, A
JOURNAL OF LUMINESCENCE, 1997, 72-4 : 307 - 308

← 1 2 3 4 5 →