High-pressure thermopower of PbTe-based compounds

被引:21
作者
Ovsyannikov, SV [1 ]
Shchennikov, VV [1 ]
机构
[1] Russian Acad Sci, Inst Met Phys, High Pressure Grp, Urals Div, Ekaterinburg 620219, Russia
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2004年 / 241卷 / 14期
关键词
D O I
10.1002/pssb.200405244
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In the present paper the thermoelectric properties of p-type PbTe-based compounds (Pb1-xGaxTe, Pb1-xSnxTe, Pb1-xSixTe, Pb1-xMnxTe, PbTe1-y, Pb1-yTe) have been investigated at high pressure up to similar to12 GPa. Structural phase transitions from cubic NaCl into orthorhombic GeS structure have been observed with thermoelectric measurements. A low sensitivity of thermoelectric properties to high-pressure treatment has been found for PbSnTe compounds (x approximate to 0.29). For the rest of the samples with a small content of doping atoms a sign inversion and a following maximum of thermoelectric power S have been established at pressures similar to1-3 GPa. The results obtained show the possibility of improving the thermoelectric figure of merit and effectiveness at moderate pressures for PbTe-based compounds. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:3231 / 3234
页数:4
相关论文
共 18 条
[1]  
Barnard RD., 1972, THERMOELECTRICITY ME
[2]   Improvement in the thermoelectric properties of pressure-tuned β-K2Bi8Se13 [J].
Meng, JF ;
Shekar, NVC ;
Chung, DY ;
Kanatzidis, M ;
Badding, JV .
JOURNAL OF APPLIED PHYSICS, 2003, 94 (07) :4485-4488
[3]   Fermi level pinning and negative magnetoresistance in PbTe:(Mn, Cr) [J].
Morozov, AV ;
Kozhanov, AE ;
Artamkin, AI ;
Slyn'ko, EI ;
Slyn'ko, VE ;
Dobrovolski, WD ;
Story, T ;
Khokhlov, DR .
SEMICONDUCTORS, 2004, 38 (01) :27-30
[4]   Application of the high-pressure thermoelectric technique for characterization of semiconductor microsamples: PbX-based compounds [J].
Ovsyannikov, SV ;
Shchennikov, VV ;
Ponosov, YS ;
Gudina, SV ;
Guk, VG ;
Skipetrov, EP ;
Mogilenskikh, VE .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2004, 37 (08) :1151-1157
[5]   Thermomagnetic and thermoelectric properties of semiconductors (PbTe, PbSe) at ultrahigh pressures [J].
Ovsyannikov, SV ;
Shchennikov, VV .
PHYSICA B-CONDENSED MATTER, 2004, 344 (1-4) :190-194
[6]   Semiconductor-metal transitions in lead chalcogenides at high pressure [J].
Ovsyannikov, SV ;
Shchennikov, VV ;
Popova, SV ;
Derevskov, AY .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2003, 235 (02) :521-525
[7]  
RAVICH YI, 1978, METHODS SEMICONDUCTO
[8]   Electronic properties of multi-phase systems with varying configuration of inclusions [J].
Shchennikov, VV ;
Ovsyannikov, SV ;
Vorontsov, GV ;
Shchennikov, VV .
MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY IX, 2004, 5342 :239-249
[9]   Thermoelectric properties of silicon at high pressures in the region of the semiconductor-metal transition [J].
Shchennikov, VV ;
Popova, SV ;
Misiuk, A .
TECHNICAL PHYSICS LETTERS, 2003, 29 (07) :598-601
[10]   Thermoelectric power, magnetoresistance of lead chalcogenides in the region of phase transitions under pressure [J].
Shchennikov, VV ;
Ovsyannikov, SV .
SOLID STATE COMMUNICATIONS, 2003, 126 (07) :373-378