On-Wafer Seamless Integration of GaN and Si (100) Electronics

被引：0

作者：

Chung, Jin Wook ^{[1
]}

Lu, Bin ^{[1
]}

Palacios, Tomas ^{[1
]}

机构：

[1] MIT, Dept Elect Engn & Comp Sci, Microsyst Technol Lab, 77 Massachusetts Ave,Bldg 39-567B, Cambridge, MA 02139 USA

来源：

2009 ANNUAL IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2009 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2009 | 2009年

关键词：

GaN; high electron mobility transistors; nitride electronics; high frequency; heterogeneous integration; FIELD-EFFECT TRANSISTORS; MONOLITHIC INTEGRATION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The high thermal stability of nitride semiconductors allows for the on-wafer integration of (001) Si CMOS electronics and electronic devices based on these semiconductors. This paper describes the technology developed at MIT to seamlessly integrate GaN and Si transistors in very close proximity (<5 mu m). This integration, the first of any III-V field effect transistor with (001) Si electronics, enables tremendous new possibilities to circuit and system designers. For example, we will study the use of hybrid GaN-Si circuits to improve the power distribution networks in Si microprocessors.

引用

页码：51 / +

页数：2

共 10 条

[1]

CAO Y, 2007, P 2007 INT SEM DEV R

[2] MONOLITHIC INTEGRATION OF SI MOSFETS AND GAAS-MESFETS [J].