Bandgap reference;
CMOS;
Temperature coefficient;
Power supply rejection ratio;
BICMOS BANDGAP;
VOLTAGE;
D O I:
10.1007/s10470-009-9333-7
中图分类号:
TP3 [计算技术、计算机技术];
学科分类号:
0812 ;
摘要:
This paper presents design of a high-precision curvature-compensated bandgap reference (BGR) circuit implemented in a 0.35 mu m CMOS technology. The circuit delivers an output voltage of 1.09 V and achieves the lowest reported temperature coefficient of similar to 3.1 ppm/degrees C over a wide temperature range of [-20 degrees C/+100 degrees C] after trimming, a power supply rejection ratio of -80 dB at 1 kHz and an output noise level of 1.43 mu V root Hz p at 1 kHz. The BGR circuit consumes a very low current of 37 mu A at 3 V and works for a power supply down to 1.5 V. The BGR circuit has a die size of 980 mu m x 830 mu m.
机构:
Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
Leung, KN
Mok, PKT
论文数: 0引用数: 0
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机构:
Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
机构:
Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
Leung, KN
Mok, PKT
论文数: 0引用数: 0
h-index: 0
机构:
Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China