A 3 V 110 μW 3.1 ppm/°C curvature-compensated CMOS bandgap reference

被引:15
作者
Guan, Xiaokang [1 ,2 ]
Wang, Xin [1 ]
Wang, Albert [1 ]
Zhao, Bin [2 ]
机构
[1] Univ Calif Riverside, Dept Elect Engn, Riverside, CA 92521 USA
[2] Freescale Semicond Inc, Irvine, CA USA
关键词
Bandgap reference; CMOS; Temperature coefficient; Power supply rejection ratio; BICMOS BANDGAP; VOLTAGE;
D O I
10.1007/s10470-009-9333-7
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This paper presents design of a high-precision curvature-compensated bandgap reference (BGR) circuit implemented in a 0.35 mu m CMOS technology. The circuit delivers an output voltage of 1.09 V and achieves the lowest reported temperature coefficient of similar to 3.1 ppm/degrees C over a wide temperature range of [-20 degrees C/+100 degrees C] after trimming, a power supply rejection ratio of -80 dB at 1 kHz and an output noise level of 1.43 mu V root Hz p at 1 kHz. The BGR circuit consumes a very low current of 37 mu A at 3 V and works for a power supply down to 1.5 V. The BGR circuit has a die size of 980 mu m x 830 mu m.
引用
收藏
页码:113 / 119
页数:7
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