On the deactivation of the dopant and electronic structure in reactively sputtered transparent Al-doped ZnO thin films

被引：35

作者：

Horwat, David ^{[1
]}

Jullien, Maud ^{[1
]}

Capon, Fabien ^{[1
]}

Pierson, Jean-Francois ^{[1
]}

Andersson, Joakim ^{[2
]}

Luis Endrino, Jose ^{[3
]}

机构：

[1] Nancy Univ UPV Metz, CNRS, UMR 7198, Inst Jean Lamour,Dept CP2S,Ecole Mines Nancy, F-54042 Nancy, France

[2] Uppsala Univ, Angstrom Lab, SE-75121 Uppsala, Sweden

[3] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2010年 / 43卷 / 13期

基金：

加拿大自然科学与工程研究理事会;

关键词：

N-TYPE; DEPENDENCE;

D O I：

10.1088/0022-3727/43/13/132003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the possible origin of electrical heterogeneities in 4 at% Al-doped ZnO (AZO) reactively sputtered films. It is found through the Zn L-3 and Al K edge x-ray absorption near-edge structure that a fraction of the Al dopant is deactivated by its positioning in octahedral conformation with oxygen. This fraction as well as the conductivity, optical bandgap and c-axis parameter of ZnO wurtzite are all found to depend on the sample position during deposition. The present results suggest the formation of a metastable Al2O3 (ZnO) m homologous phase that degrades the electrical conductivity.

引用

页数：4

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