Spray pyrolysis approach to CZTSSe thin films. Influence of solvents on film characteristics

被引:18
作者
Grinciene, G. [1 ]
Franckevicius, M. [1 ]
Kondrotas, R. [2 ,3 ,4 ]
Giraitis, R. [1 ]
Juskenas, R. [1 ]
Niaura, G. [1 ]
Naujokaitis, A. [1 ]
Juodkazyte, J. [1 ]
Tamassauskaite-Tamasiunaite, L. [1 ]
Pakstas, V [1 ]
机构
[1] Ctr Phys Sci & Technol, Sauletekio Ave 3, LT-10257 Vilnius, Lithuania
[2] Huazhong Univ Sci & Technol, Sargent Joint Res Ctr, Wuhan Natl Lab Optoelect, 1037 Luoyu Rd, Wuhan 430074, Hubei, Peoples R China
[3] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, 1037 Luoyu Rd, Wuhan 430074, Hubei, Peoples R China
[4] Huazhong Univ Sci & Technol, Shenzhen R&D Ctr, Shenzhen 518000, Peoples R China
关键词
kesterite; DMF; spray pyrolysis; CZTSSe; SOLAR-CELLS; RAMAN-SCATTERING; CONVERSION EFFICIENCY; CU2ZNSNS4; FILMS; ZN; PRECURSOR; SULFURIZATION; DEPOSITION; ABSORBER; DEFECTS;
D O I
10.1088/1361-6641/aad5d0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The Cu2ZnSnS4 (CZTS) thin films were deposited by means of spray pyrolysis technique on the Mo/glass substrate, which was heated in the air at a temperature of 320 degrees C. Samples were prepared using solutions with different solvents: dimethylsulfoxide (DMSO), dimethylformamide (DMF) and water-alcohol (H2O-EtOH). Further, the CZTS films were selenized at a temperature of 540 degrees C. The influence of the solvents on the crystalline structure, phase composition and optical properties of the CZTS and CZTSSe films were investigated using XRD, scanning electron microscopy with EDX, Raman spectroscopy and UV-vis spectroscopy. The photo-activity of CZTSSe films was assessed by measuring the open-circuit potential (Eoc) values under illumination in an aqueous solution of 0.5M Na2SO4. Pure kesterite phase Cu(2)ZnSnSe(3.2)S(0.)8 (CZTSSe) with the p-type conductivity and an optical band gap in the range of 1.21-1.31 eV was obtained after the selenization. The CZTSSe films prepared using the DMF as a solvent showed the best phase purity, the lowest density of voids, the highest stability of photoelectrochemical response and the highest power conversion efficiency of fabricated photovoltaic device.
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页数:10
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