Influence of Ta2O5 on the electrical properties of ZnO- and CoO-doped SnO2 varistors

被引：11

作者：

Filho, FM

Simoes, AZ

Ries, A

Silva, IP

Perazolli, L

Longo, E

Varela, JA

机构：

[1] UNESP, Inst Quim, BR-14800900 Araraquara, SP, Brazil

[2] UFSCar, Dept Quim, Lab Interdisciplinar Eletroquim & Ceram, BR-13565905 Sao Carlos, SP, Brazil

来源：

CERAMICS INTERNATIONAL | 2004年 / 30卷 / 08期

基金：

巴西圣保罗研究基金会;

关键词：

powders : solid state reaction; varistors; tin dioxide;

D O I：

10.1016/j.ceramint.2004.01.007

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

SnO2-based varistors doped with 0.5% cobalt, 0.5% zinc and various tantalum amounts were prepared by the solid-state route. Experimental evidence shows that small quantities of Ta2O5 improve the nonlinear properties of the samples significantly. It was found that samples doped with 0.05 mol% Ta2O5 exhibit the highest density (98.5%), the lowest electric breakdown field (E-b = 1050 V/cm) and the highest coefficient of nonlinearity (alpha = 11.5). The effect of Ta2O5 dopant could be explained by the substitution of Ta5+ by Sn4+. (C) 2004 Elsevier Ltd and Techna S.r.l. All rights reserved.

引用

页码：2277 / 2281

页数：5