Pressure effects on the phonon modes in beryllium chalcogenides

被引:25
作者
Mameri, Z. [2 ]
Zaoui, A. [1 ]
Belabbes, A. [2 ]
Ferhat, M. [2 ]
机构
[1] Univ Lille Nord France, Ecole Polytech Lille, LGCgE EA Lille 1 4515, F-59655 Villeneuve Dascq, France
[2] Univ Sci & Technol Oran, LEPM, Dept Phys, Oran 31000, Algeria
关键词
Ab initio; Phonons; BeX; GROUND-STATE PROPERTIES; AB-INITIO CALCULATION; PHASE-TRANSFORMATION; BAND-GAP; BETE; BESE; SEMICONDUCTORS; DISPERSIONS; DYNAMICS; POINTS;
D O I
10.1016/j.matchemphys.2010.04.037
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report first-principles calculations of the structural, lattice-dynamical and dielectric properties for zinc-blend beryllium chalcogenides: BeS, BeSe, and BeTe. The ground state properties, such as the lattice structure and bulk modulus, are calculated using a plane wave pseudopotential method within the density functional theory. A linear response approach is employed in order to derive the high-frequency dielectric constants, Born effective charges and phonon frequencies. Furthermore, the pressure dependence of phonon modes is also detailed. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:343 / 346
页数:4
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