Development of efficient solution-processed red phosphorescent organic light-emitting diodes using carrier transport materials

被引：6

作者：

Song, Myungkwan ^{[2
,3
]}

Park, Jin Su ^{[2
,3
]}

Kim, Chul-Hyun ^{[2
,3
]}

Kim, Jang Soo ^{[2
,3
]}

Gal, Yeong-Soon ^{[4
]}

Lee, Jae Wool ^{[1
]}

Jin, Sung-Ho ^{[2
,3
]}

机构：

[1] Dong A Univ, Dept Chem, Pusan 604714, South Korea

[2] Pusan Natl Univ, Dept Chem Educ, Interdisciplinary Program Adv Informat & Display, Pusan 609735, South Korea

[3] Pusan Natl Univ, Ctr Plast Informat Syst, Pusan 609735, South Korea

[4] Kyungil Univ, Polymer Chem Lab, Hayang 712701, South Korea

来源：

SYNTHETIC METALS | 2010年 / 160卷 / 15-16期

关键词：

Solution-process; PhOLEDs; Phosphorescent; Red; Carrier-transporting material; ENERGY-TRANSFER; ELECTROPHOSPHORESCENT DEVICES; COMPLEXES; LAYER;

D O I：

10.1016/j.synthmet.2010.05.030

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on efficient solution-processed red emissive phosphorescent organic light-emitting diodes (PhOLEDs) employing bis[9-ethyl-3-(4-phenylquinolin-2-yl)-9H-carbazolato-N,C-2']iridium acetylacetonate (Et-Cvz-PhQ)(2)Ir(acac) and bis[9-(2-(2-methoxyethoxy)ethyl)-3-(4-phenylquinolin-2-yl)-9H-carbazolato-N,C-2']iridium acetylacetonate (EO-Cvz-PhQ)(2)Ir(acac) doped into polymer host PVK, blended with electron transporting material OXD-7, and optimized concentration of carrier-transporting material TPD. The optimized PhOLEDs doped with 16 wt% carrier-transporting material shows a maximum luminance efficiency and power efficiency of 4.66 cd/A and 1.22 lm/W, which were increased by 40% and 20%, respectively, compared with that of reference device. The electroluminescence (EL) spectra exhibited the characteristic spectrum of (Et-Cvz-PhQ)(2)Ir(acac) and (EO-Cvz-PhQ)(2)Ir(acac) with its maximum at 630 nm and CIE (Commission International de L'Eclairage) coordinate of (0.66, 0.33). (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1623 / 1626

页数：4

共 14 条

[1] Highly efficient phosphorescent emission from organic electroluminescent devices [J].