Molecular beam epitaxy and characterization of InAs/Al0.2Ga0.8Sb heterostructures for magnetic sensing applications

被引：20

作者：

Behet, M

Nemeth, S

De Boeck, J

Borghs, G

Tummler, J

Woitok, J

Geurts, J

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] RWTH Aachen, Inst Phys 1, D-52074 Aachen, Germany

[3] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1998年 / 13卷 / 04期

关键词：

D O I：

10.1088/0268-1242/13/4/013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InAs/Al0.2Ga0.8Sb quantum well structures of high quality were grown by molecular beam epitaxy. The structural and electrical quality was characterized by x-ray diffractometry, Raman spectroscopy and Hall transport measurements. When an optimized buffer layer was used on a GaAs substrate, electron mobilities of 28 000 cm(2) V-1 s(-1) at 300 K and 400 000 cm(2) V-1 s(-1) at 20 K were routinely achieved for undoped structures. These excellent transport properties were utilized in a sensitive magnetoresistive sensor.

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收藏

页码：428 / 432

页数：5

相关论文

共 16 条

[1] Influence of the buffer layers on the morphology and the transport properties in InAs/(Al,Ga)Sb quantum wells grown by molecular beam epitaxy [J].

Blank, HR ;

Thomas, M ;

Wong, KC ;

Kroemer, H .

APPLIED PHYSICS LETTERS, 1996, 69 (14) :2080-2082

[2] InAs/AlSb dual-gate HFET's [J].

Bolognesi, CR ;

Chow, DH .

IEEE ELECTRON DEVICE LETTERS, 1996, 17 (11) :534-536

[3] EFFECTS OF THE INTERFACE BONDING TYPE ON THE OPTICAL AND STRUCTURAL-PROPERTIES OF INAS-ALSB QUANTUM-WELLS [J].

BRAR, B ;

IBBETSON, J ;

KROEMER, H ;

ENGLISH, JH .

APPLIED PHYSICS LETTERS, 1994, 64 (25) :3392-3394

[4] PHOTOCONDUCTIVITY IN ALSB/INAS QUANTUM-WELLS [J].

GAUER, C ;

SCRIBA, J ;

WIXFORTH, A ;

KOTTHAUS, JP ;

NGUYEN, C ;

TUTTLE, G ;

ENGLISH, JH ;

KROEMER, H .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (01) :S137-S140

[5] SOLID-STATE MAGNETIC-FIELD SENSORS AND APPLICATIONS [J].

HEREMANS, J .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1993, 26 (08) :1149-1168

[6] INAS DEEP QUANTUM-WELL STRUCTURES AND THEIR APPLICATION TO HALL ELEMENTS [J].

KUZE, N ;

NAGASE, K ;

MURAMATSU, S ;

MIYA, S ;

IWABUCHI, T ;

ICHII, A ;

SHIBASAKI, I .

JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) :1307-1312

[7] NEGATIVE PERSISTENT PHOTOCONDUCTIVITY IN THE AL0.6GA0.4SB/INAS QUANTUM-WELLS [J].

LO, I ;

MITCHEL, WC ;

MANASREH, MO ;

STUTZ, CE ;

EVANS, KR .

APPLIED PHYSICS LETTERS, 1992, 60 (06) :751-753

[8] STUDY OF LONG-WAVELENGTH OPTIC PHONONS IN GA1-XALXSB [J].

LUCOVSKY, G ;

CHENG, KY ;

PEARSON, GL .

PHYSICAL REVIEW B, 1975, 12 (10) :4135-4141

[9] INTERBAND TUNNELING IN POLYTYPE GASB/ALSB/INAS HETEROSTRUCTURES [J].

LUO, LF ;

BERESFORD, R ;

WANG, WI .

APPLIED PHYSICS LETTERS, 1989, 55 (19) :2023-2025

[10] SURFACE-LAYER MODULATION OF ELECTRON CONCENTRATIONS IN INAS-ALSB QUANTUM-WELLS [J].

NGUYEN, C ;

BRAR, B ;

KROEMER, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (04) :1706-1709