Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and 15N isotopes

被引：10

作者：

Qi, Meng ^{[1
]}

Li, Guowang ^{[1
]}

Protasenko, Vladimir ^{[1
]}

Zhao, Pei ^{[1
]}

Verma, Jai ^{[1
]}

Song, Bo ^{[1
]}

Ganguly, Satyaki ^{[1
]}

Zhu, Mingda ^{[1
]}

Hu, Zongyang ^{[1
]}

Yan, Xiaodong ^{[1
]}

Mintairov, Alexander ^{[1
,2
]}

Xing, Huili Grace ^{[1
]}

Jena, Debdeep ^{[1
]}

机构：

[1] Univ Notre Dame, Notre Dame, IN 46556 USA

[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 04期

关键词：

PIEZOELECTRIC POLARIZATION; ALGAN/GAN HETEROSTRUCTURES; SCATTERING; INN;

D O I：

10.1063/1.4906900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual marker method for Raman spectroscopy. By combining these techniques, we demonstrate the effectiveness in studying strain in the vertical direction. This technique will enable the precise probing of properties of buried active layers in heterostructures, and can be extended in the future to vertical devices such as those used for optical emitters and for power electronics. (C) 2015 AIP Publishing LLC.

引用

页数：5

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