Thermal stability of spin-transfer switching in CPP-GMR devices

被引：2
作者：
Otani, Y.
Kubota, H.
Fukushima, A.
Maehara, H.
Yuasa, S.
Suzuki, Y.
机构：
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
[2] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan
[3] Canon ANELVA Corp, Fuchu, Tokyo 1838502, Japan
[4] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan
[5] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2007年 / 310卷 / 02期
关键词：
spin-transfer; thermal activation; thermal factor; CPP-GMR;
D O I：
10.1016/j.jmmm.2006.10.930
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Spin-transfer switching (STS) was investigated in CoFe/Cu/CoFe current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) devices. The devices showed magnetoresistance ratio of 0.65 +/- 0.04% at room temperature. Abrupt resistance changes due to STS were clearly observed by applying short current pulses. We evaluated thermal stability factors of the small Co-Fe free layer cell from pulse duration dependence of switching current and from static magnetization processes. The thermal stability factors obtained from the two methods were in good agreement. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：2026 / 2028
页数：3
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