Wetting properties and interfacial energies in liquid phase growth of α-SiC

被引：29

作者：

Yakimova, R ^{[1
]}

Syvajarvi, M

Janzen, E

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[2] Outokumpu Semitron, S-17824 Ekero, Sweden

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

liquid phase growth; wetting angle; interfacial energy; surface free energy; micropipe closing;

D O I：

10.4028/www.scientific.net/MSF.264-268.159

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The wetting angles of Si-melt and Si Sc alloy on alpha-SiC are investigated at different temperatures and the interfacial energies are estimated. From this the surface free energy of 4H-SiC is compared with 6H-SiC for both the Si and C-face and the: results are discussed related to LPE growth. Mechanism for micropipe closing is suggested.

引用

页码：159 / 162

页数：4

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