Effect of channel width on the electrical characteristics of amorphous/nanocrystalline silicon bilayer thin-film transistors

被引：13

作者：

Hatzopoulos, Argyrios T. ^{[1
]}

Arpatzanis, Nikolaos

Tassis, Dimitrios H.

Dimitriadis, Charalabos A.

Templier, Francois

Oudwan, Maher

Kamarinos, George

机构：

[1] Aristotle Univ Thessaloniki, Dept Phys, Thessaloniki 54124, Greece

[2] CEA, LETI, French Atom Energy Commiss, IHS,Elect & Informat Technol Lab, F-38504 Grenoble, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 05期

关键词：

amorphous silicon (a-Si); channel width; nanocrystalline silicon (nc-Si); thin-film transistor (TFT);

D O I：

10.1109/TED.2007.894597

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of the channel width dimension on the electrical characteristics of amorphous/nanocrystalline silicon bilayer thin-film transistors (TFTs) is investigated. For comparison, nanocrystalline silicon monolayer TFTs are also studied. The experimental results show that the leakage current is decreased and the back-channel conduction is suppressed in bilayer channel devices. The overall results demonstrate that the performance of bilayer TFTs is enhanced with decreasing the channel width, which is attributed to the corner effect.

引用

页码：1265 / 1269

页数：5