Room-temperature "W" diode lasers emitting at λ≈4.0 μm

被引：19
作者：
Bewley, WW
Vurgaftman, I
Kim, CS
Kim, M
Canedy, CL
Meyer, JR
Bruno, JD
Towner, FJ
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
[2] Max Technol Inc, Hyattsville, MD 20782 USA
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 23期
关键词：
D O I：
10.1063/1.1834714
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Type-II "W" diode lasers with ten quantum-well periods operated in pulsed mode to 315 K, where the emission wavelength was 4.02 mum. The devices with uncoated facets had a threshold current density of 145 A/cm(2) and slope efficiency of 47 mW/A per facet at 78 K, and displayed a characteristic temperature T(0)approximate to46 K in the range 78-300 K. (C) 2004 American Institute of Physics.
引用
收藏
页码：5544 / 5546
页数：3
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