Advances in SnO2 for Efficient and Stable n-i-p Perovskite Solar Cells

被引:365
作者
Park, So Yeon [1 ]
Zhu, Kai [1 ]
机构
[1] Natl Renewable Energy Lab, Chem & Nanosci Ctr, Golden, CO 80401 USA
关键词
electron transport layers; perovskite solar cells; semiconducting oxide layers; SnO; (2); ELECTRON-TRANSPORT LAYER; SELF-ASSEMBLED MONOLAYERS; SOLUTION-PROCESSED SNO2; LOW-TEMPERATURE; HALIDE PEROVSKITE; SELECTIVE CONTACT; HIGH-PERFORMANCE; INTERFACIAL RECOMBINATION; BAND-OFFSET; THIN-FILMS;
D O I
10.1002/adma.202110438
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Perovskite solar cells (PSCs) based on the regular n-i-p device architecture have reached above 25% certified efficiency with continuously reported improvements in recent years. A key common factor for these recent breakthroughs is the development of SnO2 as an effective electron transport layer in these devices. In this article, the key advances in SnO2 development are reviewed, including various deposition approaches and surface treatment strategies, to enhance the bulk and interface properties of SnO2 for highly efficient and stable n-i-p PSCs. In addition, the general materials chemistry associated with SnO2 along with the corresponding materials challenges and improvement strategies are discussed, focusing on defects, intrinsic properties, and impact on device characteristics. Finally, some SnO2 implementations related to scalable processes and flexible devices are highlighted, and perspectives on the future development of efficient and stable large-scale perovskite solar modules are also provided.
引用
收藏
页数:20
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