Comparative Analysis of Contact Resistance of Carbon Nanotubes Field-Effect Transistors

被引：0

作者：

Yang Heda ^{[1
]}

Li Hao ^{[1
]}

Yang Leijing ^{[1
]}

机构：

[1] Beijing Univ Posts & Telecommun, Sch Elect Engn, Beijing Key Lab Space Round Interconnect & Conver, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

来源：

ICOSM 2020: OPTOELECTRONIC SCIENCE AND MATERIALS | 2020年 / 11606卷

关键词：

carbon nanotube transistor; transfer characteristic; contact resistance; Y-function;

D O I：

10.1117/12.2585490

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Contact resistance is an important parameter to evaluate the feasibility of carbon nanotubes (CNT) field-effect transistors (FETs) in high performance logic applications. In this paper we make the systematic study of contact resistance of solution-processed CNT-FETs by transmission line method (TLM) and the Y-function method (YFM). TLM needs to calculate the voltage between source and drain electrodes of a group of devices with different channel length, but YLM only needs the transfer characteristic curve of a single device. The results by our calculation indicate that, the resistance obtained by YFM is larger than that obtained by TLM, which provides reference value for the selection of methods to find contact resistance in the future.

引用

页数：4

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