Multi-Bit Storage Based on Chalcogenide Thin Film Transistor for High Density Nonvolatile Memory Application

被引：3
|
作者：
Cai, Yanfei
Zhou, Peng [1 ]
Tang, Tingao
Gao, Charles
Lin, Yinyin
机构：
[1] Fudan Univ, Sch Microelect, Semicond Memory & Applicat Ctr, ASIC, Shanghai 200433, Peoples R China
来源：
INTEGRATED FERROELECTRICS | 2009年 / 110卷
基金：
中国国家自然科学基金;
关键词：
PHASE-CHANGE; ELECTRICAL-PROPERTIES;
D O I：
10.1080/10584580903435323
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The multi-bit storage realization based on chalcogenide thin film transistor is put forward first here, in which the chalcogenide film acts as not only phase change material but also semiconductor layer. The channel length of thin film transistor was modified by reversible phase change between amorphous and crystalline of chalcogenide thin film adjacent to source and drain. Consequently different read-out current can be achieved to realize multi-bit storage in one single cell.
引用
收藏
页码：34 / 42
页数：9
相关论文
共 10 条
  • [1] Static Induction Transistor Using TaN Thin Film as Gate Electrode for High-Performance Application
    Zheng, Z. W.
    Chen, Y. C.
    ELECTRONIC MATERIALS LETTERS, 2014, 10 (02) : 383 - 385
  • [2] Static induction transistor using TaN thin film as gate electrode for high-performance application
    Z. W. Zheng
    Y. C. Chen
    Electronic Materials Letters, 2014, 10 : 383 - 385
  • [3] In-Zn-Sn-O thin film based transistor with high-k HfO2 dielectric
    Bak, Yang Gyu
    Park, Ji Woon
    Park, Ye Jin
    Ansari, Mohd Zahid
    NamGung, Sook
    Cho, Bo Yeon
    Kim, Soo-Hyun
    Lee, Hee Young
    THIN SOLID FILMS, 2022, 753
  • [4] High density plasma etching of YSZ thin film in halogen-based inductively coupled plasmas
    Choi, Byoung Su
    Park, Jong Cheon
    Seo, Jun Won
    Ryu, Su Chak
    Lee, Hee Soo
    Ryu, Jeong Ho
    Cho, Hyun
    JOURNAL OF CERAMIC PROCESSING RESEARCH, 2016, 17 (08): : 894 - 898
  • [5] Effect of AlN Layer on the Bipolar Resistive Switching Behavior in TiN Thin Film Based ReRam Device for Non-Volatile Memory Application
    Prakash, Ravi
    Kaur, Davinder
    2ND INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC-2017), 2018, 1953
  • [6] Oxygen-doped Si15Sb85 thin film for good data retention and high speed phase-change memory application
    Zhang, Yin
    Feng, Jie
    Cai, Bingchu
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (04)
  • [7] Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb0.8Ba0.2ZrO3 Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases
    Peng, Biaolin
    Zhang, Qi
    Li, Xing
    Sun, Tieyu
    Fan, Huiqing
    Ke, Shanming
    Ye, Mao
    Wang, Yu
    Lu, Wei
    Niu, Hanben
    Zeng, Xierong
    Huang, Haitao
    ACS APPLIED MATERIALS & INTERFACES, 2015, 7 (24) : 13512 - 13517
  • [8] Lead-free A2Bi4Ti5O18 thin film capacitors (A = Ba and Sr) with large energy storage density, high efficiency, and excellent thermal stability
    Yang, Bingbing
    Guo, Mengyao
    Tang, Xianwu
    Wei, Renhuai
    Hu, Ling
    Yang, Jie
    Song, Wenhai
    Dai, Jianming
    Lou, Xiaojie
    Zhu, Xuebin
    Sun, Yuping
    JOURNAL OF MATERIALS CHEMISTRY C, 2019, 7 (07) : 1888 - 1895
  • [9] High energy-storage density of lead-free BiFeO3 doped Na0.5Bi0.5TiO3-BaTiO3 thin film capacitor with good temperature stability
    Tang, Zhenhua
    Ge, Jing
    Ni, Hao
    Lu, Biao
    Tang, Xin-Gui
    Lu, Sheng-Guo
    Tang, Minghua
    Gao, Ju
    JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 757 : 169 - 176
  • [10] Ultra-high energy storage density and ultra-wide operating temperature range in Bi2Zn2/3Nb4/3O7 thin film as a novel lead-free capacitor
    Wu, Muying
    Yu, Shihui
    Wang, Xiaohu
    Li, Lingxia
    JOURNAL OF POWER SOURCES, 2021, 497
1