Facet temperature reduction by a current blocking layer at the front facets of high-power InGaAs/AlGaAs lasers

被引：58

作者：

Rinner, F

Rogg, J

Kelemen, MT

Mikulla, M

Weimann, G

Tomm, JW

Thamm, E

Poprawe, R

机构：

[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

[2] Max Born Inst Nichtlineare Opt & Kurzzeitspekt, D-12489 Berlin, Germany

[3] Fraunhofer Inst Lasertech, D-52074 Aachen, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 03期

关键词：

D O I：

10.1063/1.1531839

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The facet heating of a single-quantum well InGaAs/AlGaAs broad-area high-power laser-diodes emitting at 940 nm was reduced by the introduction of a 30 mum long current blocking region located at the front facet of the laser, also increasing the level of catastrophical optical mirror damage. The blocking of the pump current close to the facet reduces the carrier density and then the surface recombination current. The temperature rise of 2 mm long and 200 Am wide lasers is reduced by a factor of 3-4. (C) 2003 American Institute of Physics. [DOI: 10.1063/1.1531839].

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页码：1848 / 1850

页数：3

相关论文

共 12 条

[1] High power laser bars for 70 W cw (808nm) -: a comparison between SQW and DQW [J].

Behringer, M ;

Herrmann, G ;

Grötsch, S ;

Teich, W ;

Luft, J ;

Acklin, B ;

Korte, L ;

Hanke, C ;

Marchiano, M .

IN-PLANE SEMICONDUCTOR LASERS V, 2001, 4287 :83-92

[2] REDUCTION OF MIRROR TEMPERATURE IN GAAS/ALGAAS QUANTUM-WELL LASER-DIODES WITH SEGMENTED CONTACTS [J].

HERRMANN, FU ;

BEECK, S ;

ABSTREITER, G ;

HANKE, C ;

HOYLER, C ;

KORTE, L .

APPLIED PHYSICS LETTERS, 1991, 58 (10) :1007-1009

[3] High-power and highly reliable operation of Al-free InGaAs-InGaAsP 0.98-μm lasers with a window structure fabricated by Si ion implantation [J].

Hiramoto, K ;

Sagawa, M ;

Kikawa, T ;

Tsuji, S .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1999, 5 (03) :817-821

[4] Thermal rollover characteristics up to 150 °C of buried-stripe type 980-nm laser diodes with a current injection window delineated by a SiNx layer [J].

Horie, H ;

Yamamoto, Y ;

Arai, N ;

Ohta, H .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (01) :13-15

[5] Optimization of GaAsP/AlGaAs-based QW laser structures for high power 800 nm operation [J].

Knauer, A ;

Bugge, F ;

Erbert, G ;

Wenzel, H ;

Vogel, K ;

Zeimer, U ;

Weyers, M .

JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (01) :53-56

[6] Reduced 980 nm laser facet absorption by band gap shifted extended cavities [J].

Piva, PG ;

Goldberg, RD ;

Mitchell, IV ;

Fafard, S ;

Dion, M ;

Buchanan, M ;

Charbonneau, S ;

Hillier, G ;

Miner, C .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (04) :1790-1793

[7] Emitter failure and thermal facet load in high-power laser diode arrays [J].

Puchert, R ;

Tomm, JW ;

Jaeger, A ;

Barwolff, A ;

Luft, J ;

Spath, TW .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (05) :483-486

[8] Carrier density dependence of the lifetime of InGaAs/AlGaAs high power lasers [J].

Rinner, F ;

Rogg, J ;

Wiedmann, N ;

Konstanzer, H ;

Dammann, M ;

Mikulla, M ;

Poprawe, R ;

Weimann, G .

TEST AND MEASUREMENT APPLICATIONS OF OPTOELECTRONIC DEVICES, 2002, 4648 :1-8

[9]

Strite T, 1999, III-VS REV, V12, P24, DOI 10.1016/S0961-1290(99)80016-7

[10] COMPARISON OF THE FACET HEATING BEHAVIOR BETWEEN ALGAAS SINGLE QUANTUM-WELL LASERS AND DOUBLE-HETEROJUNCTION LASERS [J].

TANG, WC ;

ROSEN, HJ ;

VETTIGER, P ;

WEBB, DJ .

APPLIED PHYSICS LETTERS, 1992, 60 (09) :1043-1045