Scanning Tunneling Microscope and Photoemission Spectroscopy Investigations of Bismuth on Epitaxial Graphene on SiC(0001)

被引：18

作者：

Huang, Han ^{[1
,2
,3
]}

Wong, Swee Liang ^{[2
,4
]}

Wang, Yuzhan ^{[2
]}

Sun, Jia-Tao ^{[5
]}

Gao, Xingyu ^{[2
]}

Wee, Andrew Thye Shen ^{[2
,3
,4
]}

机构：

[1] Cent S Univ, Inst Super Microstruct & Ultrafast Proc Adv Mat, Sch Phys & Elect, Changsha 410012, Hunan, Peoples R China

[2] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[3] Natl Univ Singapore, Graphene Res Ctr, Singapore 117546, Singapore

[4] Natl Univ Singapore, NUS Grad Sch Integrat Sci & Engn, Singapore 117456, Singapore

[5] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2014年 / 118卷 / 43期

关键词：

THIN BI FILMS; ORIENTATION TRANSITION; ELECTRONIC-PROPERTIES; ROOM-TEMPERATURE; SURFACE; GROWTH; GAS; GRAPHITE; LAYERS;

D O I：

10.1021/jp507072p

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The initial growth of bismuth (Bi) on epitaxial graphene (EG) on SiC(0001) at low deposition rates has been investigated using low temperature scanning tunneling microscopy (LT-STM) and synchrotron-based photoemission spectroscopy (PES). PES measurements reveal an islanding growth mode of Bi on EG due to weak interfacial interactions. LT-STM measurements show that Bi forms one-dimensional (1D) 4-monolayer-thick nanoribbons on EG with the orientation relationship of Bi(011(_)2) 3/4 EG(0001) and Bi(112(_)0) aligned well with EG(112(_)0). Scanning tunneling spectroscopy (STS) results reveal the semiconducting nature of such Bi nanoribbons.

引用

页码：24995 / 24999

页数：5

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