Sapphire substrate misorientation effects on GaN nucleation layer properties

被引：32
作者：
Lu, D
Florescu, DI
Lee, DS
Merai, V
Ramer, JC
Parekh, A
Armour, EA
机构：
[1] Veeco TurboDisc Operat, Somerset, NJ 08873 USA
[2] Rutgers State Univ, Sch Engn, Piscataway, NJ 08855 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2004年 / 272卷 / 1-4期
关键词：
metalorganic chemical vapor deposition; quantum wells; nitrides;
D O I：
10.1016/j.jcrysgro.2004.08.113
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We investigate the effects of c-plane sapphire substrate misorientation angle on metalorganic chemical vapor deposition of GaN nucleation layers. The angle from (0001) c-plane sapphire was varied between 0.05degrees and 0.30degrees, tilted towards the m-plane axis. Structural and optical characterization techniques demonstrate an improvement of surface morphology and crystalline quality of GaN nucleation layers as the miscut angle approaches 0.30degrees. These results correlate well with our previous study of miscut angle on full light-emitting diode structures. (C) 2004 Elsevier B.V. All rights reserved.
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收藏
页码：353 / 359
页数：7
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