Heterostructures with InGaAs/GaAs quantum dots doped by transition elements. Part I: Photoluminescence properties

被引：1

作者：

Dorokhin, M. V. ^{[1
]}

Zdoroveyshchev, A. V. ^{[1
]}

Malysheva, E. I. ^{[1
]}

Danilov, Yu. A. ^{[1
]}

机构：

[1] Lobachevsky Nizhny Novgorod State Univ, Res Physicotech Inst, Pr Gagarina 23, Nizhnii Novgorod 603950, Russia

来源：

TECHNICAL PHYSICS | 2017年 / 62卷 / 09期

基金：

俄罗斯基础研究基金会;

关键词：

ELECTROLUMINESCENCE; GROWTH; TEMPERATURE; LASERS; LAYERS;

D O I：

10.1134/S1063784217090055

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical properties of InGaAs/GaAs quantum dot heterostructures that are doped by manganese and chromium during growth by Metal-organic vapor phase epitaxy have been studied. Surface topography photoluminescence spectra measurements have demonstrated the possibility of controlling the spectral characteristics of the structure by varying quantum well growth conditions and sizes in the presence of impurity atoms. Research results are explained by the peculiarities of InAs nanoclusters formation on the GaAs surface in the presence of Mn and Cr atoms.

引用

页码：1398 / 1402

页数：5

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