Memory Efficient Laguerre-FDTD Scheme for Dispersive Media

被引：0

作者：

Yi, Ming ^{[1
]}

Swaminathan, Madhavan ^{[1
]}

Ha, Myunghyun ^{[2
,3
,4
]}

Qian, Zhiguo ^{[2
,3
,4
]}

Aydiner, Alaeddin ^{[2
,3
,4
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Interconnect & Packaging Ctr, Atlanta, GA 30332 USA

[2] Intel Corp, Santa Clara, CA 95051 USA

[3] Intel Corp, Chandler, AZ 85226 USA

[4] Intel Corp, Hillsboro, OR 97124 USA

来源：

2013 IEEE 22ND CONFERENCE ON ELECTRICAL PERFORMANCE OF ELECTRONIC PACKAGING AND SYSTEMS (EPEPS) | 2013年

关键词：

Laguerre-FDTD; memory efficient; dispersive material; Debye and Lorentz media; FORMULATION;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

The unconditionally stable Laguerre-FDTD method is suitable for simulating 3-D structures with large time step. In this work, memory efficient Laguerre-FDTD scheme for dispersive materials is proposed to ensure accurate modeling and less memory consumption compared to standard procedures. The memory efficient scheme is realized by representing the Laguerre domain expression of electric susceptibility in a recursive manner. Formulations have been derived for both Debye and Lorentz media. Numerical results show that the proposed Laguerre-FDTD method exhibits significant peak memory usage reduction and equivalent calculation accuracy of dispersive material involved transient simulation.

引用

页码：51 / 54

页数：4

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