Band-edge photoluminescence in polycrystalline ZnO films at 1.7K

被引：145

作者：

Studenikin, SA

Cocivera, M ^{[1
]}

Kellner, W

Pascher, H

机构：

[1] Univ Guelph, Guelph Waterloo Ctr Grad Work Chem, Guelph, ON N1G 2W1, Canada

[2] Univ Bayreuth, D-95440 Bayreuth, Germany

来源：

JOURNAL OF LUMINESCENCE | 2000年 / 91卷 / 3-4期

关键词：

zinc oxide; polycrystalline films; phonons; two-phonon replica; band-edge emission; annealing;

D O I：

10.1016/S0022-2313(00)00213-1

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This paper presents an investigation of the low-temperature band-edge photoluminescence (PL) of ZnO films prepared by spray pyrolysis. Annealing samples in forming gas modified the PL spectra and density of conduction electrons. Photoluminescence revealed a complicated multi-line structure. The origin of the observed near-UV lines was identified in terms of bound exciton complexes and the phonon replicas. In annealed high-conductivity samples this was the usual optical phonon replica with a period of 71.6 meV. In low-conductive as-grown films an oscillating structure with a period of 108 meV was revealed. This new structure was attributed to a two transverse optical phonon replica. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：223 / 232

页数：10

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