Back illuminated AlGaN solar-blind photodetectors

被引：88

作者：

Lambert, DJH ^{[1
]}

Wong, MM ^{[1
]}

Chowdhury, U ^{[1
]}

Collins, C ^{[1
]}

Li, T ^{[1
]}

Kwon, HK ^{[1
]}

Shelton, BS ^{[1
]}

Zhu, TG ^{[1
]}

Campbell, JC ^{[1
]}

Dupuis, RD ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78712 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 12期

关键词：

D O I：

10.1063/1.1311821

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the growth, fabrication, and characterization of AlxGa1-xN (0 less than or equal to x less than or equal to 0.60) heteroepitaxial back-illuminated solar-blind p-i-n photodiodes on (0001) sapphire substrates. The group III-nitride heteroepitaxial layers are grown by low-pressure metalorganic chemical vapor deposition on double polished sapphire substrates using various growth conditions. The back-illuminated devices exhibit very low dark current densities. Furthermore, they exhibit external quantum efficiencies up to 35% at the peak of the photoresponse (lambda similar to 280 nm). Improvements were made to the growth technique in order to achieve crack-free Al0.4Ga0.6N active regions on a thick Al0.6Ga0.4N window layer and to obtain activated p-type Al0.4Ga0.6N layers. (C) 2000 American Institute of Physics. [S0003-6951(00)05438-3].

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页码：1900 / 1902

页数：3

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