Rear located Ag nanocylinders for photocurrent enhancement in thin film GaAs solar cells

被引：1

作者：

Singh, Gurjit ^{[1
]}

Verma, S. S. ^{[1
]}

机构：

[1] St Longowal Inst Engn & Technol, Dept Phys, Sangrur 148106, Punjab, India

来源：

DAE SOLID STATE PHYSICS SYMPOSIUM 2019 | 2020年 / 2265卷

关键词：

PLASMONICS; EFFICIENCY;

D O I：

10.1063/5.0017439

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Light trapping is a crucial factor to improve the photocurrent response in thin film solar cells. In this paper, a light trapping scheme is demonstrated by placing Ag nanocylinders on the rear surface of thin film GaAs solar cells. Finite difference time domain (FDTD) numerical simulations were used for parametric optimization of rear-located Ag nanocylinders. The results reveal that the radius, height and period of nanocylinders play crucial role in photocurrent enhancement. The maximum photocurrent of 19.47mA/cm(2) is obtained for nanocylinders with radius 30nm, height 90nm and period 80nm.

引用

页数：4

共 10 条

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