Acousto-optical spectroscopy of dislocations in wide band gap semiconductors

被引：0
作者：
Kardashev, BK [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
MECHANICAL SPECTROSCOPY II, PROCEEDINGS | 2003年 / 89卷
关键词：
ultrasonics; luminescence; acoustic properties; dislocations; point defects; semiconductors;
D O I：
10.4028/www.scientific.net/SSP.89.233
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Fundamental problems of interaction of dislocations with photo-sensitive point defects are discussed using a lot of photo-acoustic, acousto-optic, photo-optic and acousto-electric effects recently found in the wide band gap HgI2 semiconductor. Acousto-optical spectra obtained for both amplitude independent and amplitude dependent damping ranges are presented. Available data for the amplitude dependent damping in semiconductors are reviewed.
引用
收藏
页码：233 / 246
页数：14
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