Ultrafast Solar-Blind Ultraviolet Detection by Inorganic Perovskite CsPbX3 Quantum Dots Radial Junction Architecture

被引:146
作者
Lu, Jiawen [1 ]
Sheng, Xuexi [2 ]
Tong, Guoqing [1 ]
Yu, Zhongwei [1 ]
Sun, Xiaolin [1 ]
Yu, Linwei [1 ]
Xu, Xiangxing [2 ]
Wang, Junzhuan [1 ]
Xu, Jun [1 ]
Shi, Yi [1 ]
Chen, Kunji [1 ]
机构
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Sch Elect Sci & Engn, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[2] Nanjing Normal Univ, Sch Chem & Mat Sci, Jiangsu Key Lab Biofunct Mat, Nanjing 210046, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
HYDROGENATED AMORPHOUS-SILICON; UV DETECTOR; NANOCRYSTALS; PERFORMANCE; FABRICATION; EFFICIENCY; BR; CL;
D O I
10.1002/adma.201700400
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Inorganic CsPbX3 (X = Cl, Br, I, or hybrid among them) perovskite quantum dots (IPQDs) are promising building blocks for exploring high performance optoelectronic applications. In this work, the authors report a new hybrid structure that marries CsPbX3 IPQDs to silicon nanowires (SiNWs) radial junction structures to achieve ultrafast and highly sensitive ultraviolet (UV) detection in solar-blind spectrum. A compact and uniform deployment of CsPbX3 IPQDs upon the sidewall of low-reflective 3D radial junctions enables a strong light field excitation and efficient down-conversion of the ultraviolet incidences, which are directly tailored into emission bands optimized for a rapid photodetection in surrounding ultrathin radial p-i-n junctions. A fast solar-blind UV detection has been demonstrated in this hybrid IPQD-NW detectors, with rise/fall response time scales of 0.48/1.03 ms and a high responsivity of 54 mA W-1@200 nm (or 32 mA W-1@270 nm), without the need of any external power supply. These results pave the way toward large area manufacturing of high performance Si-based perovskite UV detectors in a scalable and low-cost procedure.
引用
收藏
页数:8
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