A 64GHz Push-Push Oscillator in 0.13 μm BiCMOS Technology

被引：0

作者：

Ameziane, Chama ^{[1
]}

Belot, Didier ^{[3
]}

Plana, Robert ^{[2
]}

Taris, Thierry ^{[1
]}

Deval, Yann ^{[1
]}

Begueret, Jean-Baptiste ^{[1
]}

机构：

[1] Univ Bordeaux, IMS Lab, 351 Cours Liberat, F-33405 Talence, France

[2] Univ Toulouse 1, LAAS CNR, F-31042 Toulouse, France

[3] STMicroelec, site Minatec, F-38016 Grenoble, France

来源：

2009 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3 | 2009年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the design and measurements of a 64GHz push-push oscillator fabricated in 0.13 mu m BiCMOS9mW technology provided by STMicroelectronics. It achieves -14dBm output power at 68GHz with good fundamental suppression. The VCO has a measured tuning range of 4GHz from 64GHz to 68GHz (fundamentally from 32GHz to 34GHz). The oscillator consumes 20mA, and the buffer has an additional consumption of 23mA, under 1.8V voltage supply.

引用

页码：401 / +

页数：2

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